Nanometer-accurate grating fabrication with scanning beam interference lithography

被引：45

作者：

Chen, CG ^{[1
]}

Konkola, PT ^{[1
]}

Heilmann, RK ^{[1
]}

Joo, C ^{[1
]}

Schattenburg, ML ^{[1
]}

机构：

[1] MIT, Space Nanotechnol Lab, Cambridge, MA 02139 USA

来源：

NANO- AND MICROTECHNOLOGY: MATERIALS, PROCESSES, PACKAGING, AND SYSTEMS | 2002年 / 4936卷

关键词：

scanning beam interference lithography; SBIL; interference lithography; grating; metrology; displacement measuring interferometry; fringe locking; phase shifting interferometry;

D O I：

10.1117/12.469431

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We are developing a Scanning Beam Interference Lithography (SBIL) system. SBIL represents a new paradigm in semiconductor metrology, capable of patterning large-area linear gratings and grids with nanometer overall phase accuracy. Realizing our accuracy goal is a major challenge because the interference fringes have to be locked to a moving substrate with nanometer spatial phase errors while the period of the fringes has to be stabilized to approximately one part per million. In this paper, we present a review of the SBIL design, and report recent progress towards prototyping the first-ever SBIL tool.

引用

页码：126 / 134

页数：9

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