Fabrication of vanadium oxide thin film with high-temperature coefficient of resistance using V2O5/V/V2O5 multi-layers for uncooled microbolometers

被引:69
作者
Han, YH
Choi, IH
Kang, HK
Park, JY
Kim, KT
Shin, HJ
Moon, S
机构
[1] Korea Univ, Dept Mat Sci & Engn, Sungbuk Ku, Seoul 136701, South Korea
[2] Korea Inst Sci & Technol, Microsyst Res Ctr, Seoul 136650, South Korea
关键词
vanadium oxide; bolometer; temperature coefficient of resistance (TCR); annealing;
D O I
10.1016/S0040-6090(02)01263-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Vanadium oxide thin film is a promising material for uncooled microbolometers due to its high temperature coefficient of resistance (TCR) at room temperature. It is, however, very difficult to deposit vanadium oxide thin films having a high temperature coefficient of resistance and low resistance because of the process limits in microbolometer fabrication. We present a novel fabrication method for vanadium oxide thin films having good electrical properties. Through the formation of a sandwich structure of V2O5 (100 Angstrom)/V (similar to80 Angstrom)/V2O5 (500 Angstrom) by a conventional sputter method and post-annealing at 300 degreesC in oxygen, a mixed phase of VOx is formed. The results show that the mixed phase formed by this process has a high TCR of more than - 2%/degreesC and low resistivity of < 0.1 Ohm cm at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:260 / 264
页数:5
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