Preparation and properties of vanadium dioxide thin films for uncooled microbolometer

被引：4

作者：

Chen, CH ^{[1
]}

Yi, XJ ^{[1
]}

Zhao, XR ^{[1
]}

Xiong, BF ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, State Key Lab Laser Technol, Wuhan 430074, Peoples R China

来源：

2000 25TH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES CONFERENCE DIGEST | 2000年

关键词：

vanadium dioxide; thin films; uncooled microbolometer; IR detectors; temperature coefficient of resistance; XPS;

D O I：

10.1109/ICIMW.2000.892973

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vanadium dioxide thin films are used for uncooled microbolometer due to their high temperature coefficient of resistance (TCR). This paper describes the preparation and properties of the films. The films are deposited on quartz substrate by low temperature reactive ion-beam sputtering and post annealing at a temperature of 500 degreesC. The X-ray photoelectron spectroscopy (XPS) indicates that the films are mixed vanadium oxides of mainly V4+ and V5+. The TCR value of -1.86%K-1 at a temperature of 25 degreesC is achieved through electrical conductivity measurements.

引用

页码：145 / 146

页数：2

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