Preparation of hydrogen-containing Ta2O5 thin films by reactive sputtering using O2+H2Omixed gas

被引：9

作者：

Abe, Yoshio ^{[1
]}

Itadani, Naruhiro ^{[1
]}

Kawamura, Midori ^{[1
]}

Sasaki, Katsutaka ^{[1
]}

Itoh, Hidenobu ^{[1
]}

机构：

[1] Kitami Inst Technol, Dept Mat Sci, Kitami, Hokkaido 0908507, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 02期

关键词：

tantalum oxide; hydrogen; solid-oxide electrolyte; reactive sputtering;

D O I：

10.1143/JJAP.46.777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogen-containing tantalum oxide (Ta2O5) thin films are considered to be a candidate for proton-conducting solid-oxide electrolytes. Hydrogen-containing Ta2O5 thin films were prepared by reactively sputtering a Ta metal target in O-2, + H2O mixed gas. The effects of the H2O flow ratio and sputtering power on the hydrogen content in the films were studied by Fourier transform infrared spectroscopy (FTIR) and secondary ion mass spectrometry (SIMS). The hydrogen content in the films deposited in O-2 + H2O mixed gas was approximately three times as large as that deposited in O-2 gas, and a maximum hydrogen content of 3.5 X 10(21) atoms/cm(3) was obtained.

引用

页码：777 / 779

页数：3

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