Photoluminescence study of InAs quantum dots and quantum dashes grown on GaAs (211)B

被引：7

作者：

Guo, SP ^{[1
]}

Ohno, H ^{[1
]}

Shen, AD ^{[1
]}

Ohno, Y ^{[1
]}

Matsukura, F ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 98077, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 3B期

关键词：

quantum dots; quantum dashes; GaAs (211)B; molecular beam epitaxy; photoluminescence; blue-shift;

D O I：

10.1143/JJAP.37.1527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs self-organized quantum dots (QDs) and quantum dashes (QDHs) were grown by molecular beam epitaxy on GaAs (211)B substrates. QDs with bimodal size distribution were formed at lower growth temperatures, whereas QDHs were observed at higher growth temperatures. Photoluminescence (PL) intensity and peak position of QDs and QDHs showed similar temperature dependence, whereas the excitation density dependence of the Pi, peak intensity and the PL peak energy of the two nanostructures was different. The blue shift in QDH peak energy with the increase of the excitation density is suggested to be due to the existence of the piezoelectric field in InAs QDHs.

引用

页码：1527 / 1531

页数：5

共 16 条

[11] NATURE OF STRAINED INAS 3-DIMENSIONAL ISLAND FORMATION AND DISTRIBUTION ON GAAS(100) [J].