Towards Flexible All-Carbon Electronics: Flexible Organic Field-Effect Transistors and Inverter Circuits Using Solution-Processed All-Graphene Source/Drain/Gate Electrodes

被引:41
作者
Chen, Yongsheng [1 ,2 ]
Xu, Yanfei [1 ,2 ]
Zhao, Kai [3 ]
Wan, Xiangjian [1 ,2 ]
Deng, Jiachun [3 ]
Yan, Weibo [1 ,2 ]
机构
[1] Nankai Univ, Coll Chem, Inst Polymer Chem, Key Lab Funct Polymer Mat, Tianjin 300071, Peoples R China
[2] Nankai Univ, Coll Chem, Inst Polymer Chem, Ctr Nanoscale Sci & Technol, Tianjin 300071, Peoples R China
[3] Tianjin Univ Technol, Inst Mat Phys, Key Lab Display Mat & Photoelect Devices, Tianjin 300384, Peoples R China
基金
中国国家自然科学基金;
关键词
Solution processing; flexibility; all-graphene-electrode OFETs; inverter circuits; HIGH-PERFORMANCE; LARGE-AREA; PATTERNED GRAPHENE; ULTRATHIN FILMS; HIGH-MOBILITY; OXIDE-FILMS; TRANSPARENT; SEMICONDUCTORS; DIELECTRICS;
D O I
10.1007/s12274-010-0035-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Flexible organic field-effect transistors (OFETs) using solution-processable functionalized graphene for all the electrodes (source, drain, and gate) have been fabricated for the first time. These OFETs show performance comparable to corresponding devices using Au electrodes as the source/drain electrodes on SiO2/Si substrates with Si as the gate electrode. Also, these devices demonstrate excellent flexibility without performance degradation over severe bending cycles. Furthermore, inverter circuits have been designed and fabricated using these all-graphene-electrode OFETs. Our results demonstrate that the long-sought dream for all-carbon and flexible electronics is now much closer to reality.
引用
收藏
页码:714 / 721
页数:8
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