SPATIALLY RESOLVED DEFECT MAPPING IN SEMICONDUCTORS USING LASER-MODULATED THERMOREFLECTANCE - RESPONSE

被引：4

作者：

GUIDOTTI, D

VANDRIEL, HM

机构：

[1] UNIV TORONTO,DEPT PHYS,TORONTO M5S 1A7,ONTARIO,CANADA

[2] UNIV TORONTO,ERINDALE COLL,MISSISSAUGA L5L 1C6,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 05期

关键词：

D O I：

10.1063/1.97149

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：301 / 302

页数：2

共 12 条

[1]

BATZ B, 1972, SEMICONDUCT SEMIMET, V9, P315

[2]

CARDONA M, 1969, SOLID STATE PHYS S, V11, P118

[3] PHOTOREFLECTANCE AND ELECTROREFLECTANCE IN SILICON [J].

CERDEIRA, F ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1969, 7 (12) :879-&

[4] DIELECTRIC-CONSTANT AND PLASMA FREQUENCY OF P-TYPE GE LIKE SEMICONDUCTORS [J].

COMBESCOT, M ;

NOZIERES, P .

SOLID STATE COMMUNICATIONS, 1972, 10 (03) :301-+

[5] INFRARED REFLECTIVITY PROBING OF THERMAL AND SPATIAL PROPERTIES OF LASER-GENERATED CARRIERS IN GERMANIUM [J].

GALLANT, MI ;

VANDRIEL, HM .

PHYSICAL REVIEW B, 1982, 26 (04) :2133-2146

[6] SPATIALLY RESOLVED DEFECT MAPPING IN SEMICONDUCTORS USING LASER-MODULATED THERMOREFLECTANCE [J].

GUIDOTTI, D ;

VANDRIEL, HM .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1336-1338

[7] ELECTRONIC RAMAN-SCATTERING AND ANTI-RESONANCE BEHAVIOR IN HIGHLY STRESSED PHOTOEXCITED SILICON [J].

GUIDOTTI, D ;

LAI, S ;

KLEIN, MV ;

WOLFE, JP .

PHYSICAL REVIEW LETTERS, 1979, 43 (26) :1950-1953

[8]

GUIDOTTI D, 1985, JUN REV PROGR QUANT

[9] OPTICAL HEATING IN SEMICONDUCTORS [J].

MEYER, JR ;

BARTOLI, FJ ;

KRUER, MR .

PHYSICAL REVIEW B, 1980, 21 (04) :1559-1568

[10] PHOTOTHERMAL DISPLACEMENT SPECTROSCOPY - AN OPTICAL PROBE FOR SOLIDS AND SURFACES [J].

OLMSTEAD, MA ;

AMER, NM ;

KOHN, S ;

FOURNIER, D ;

BOCCARA, AC .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 32 (03) :141-154

← 1 2 →