DIFFUSION-INDUCED DEFECTS IN SILICON .2.

[11] MEIERAN ES, 1966, B AM PHYS SOC, V11, P402

[12] Ruhle M, 1965, PHYS STATUS SOLIDI, V11, P819, DOI 10.1002/pssb.19650110233

[13] SILICON PHOSPHIDE PRECIPITATES IN DIFFUSED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (10) : 1188 - 1189

[14] SILCOCK JM, 1964, PHIL MAG, V11, P361

[15] DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J]. SOLID-STATE ELECTRONICS, 1961, 2 (2-3) : 123 - 132

[16] DIFFUSION-INDUCED DISLOCATIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1909 - &

[11] MEIERAN ES, 1966, B AM PHYS SOC, V11, P402

[12] Ruhle M, 1965, PHYS STATUS SOLIDI, V11, P819, DOI 10.1002/pssb.19650110233

[13] SILICON PHOSPHIDE PRECIPITATES IN DIFFUSED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (10) : 1188 - 1189

[14] SILCOCK JM, 1964, PHIL MAG, V11, P361

[15] DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J]. SOLID-STATE ELECTRONICS, 1961, 2 (2-3) : 123 - 132

[16] DIFFUSION-INDUCED DISLOCATIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1909 - &