DEPOSITION RATE AND PHOSPHORUS CONCENTRATION OF PHOSPHOSILICATE GLASS-FILMS IN RELATION TO O2-SIH4 + PH3 MOLE FRACTION

被引：26

作者：

SHIBATA, M ^{[1
]}

SUGAWARA, K ^{[1
]}

机构：

[1] HITACHI LTD,SEMICONDUCTOR & INTEGRATED CIRCUITS DIV,KODAIRA,TOKYO,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 01期

关键词：

D O I：

10.1149/1.2134146

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：155 / 156

页数：2

相关论文

共 12 条

[1] GROWTH OF SILICA AND PHOSPHOSILICATE FILMS
BALIGA, BJ
GHANDHI, SK
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 990 - 994
[2] BARRY ML, 1970, CHEMICAL VAPOR DEPOS, P595
[3] FISHER AW, 1968, RCA REV, V29, P549
[4] FISHER AW, 1968, RCA REV, V29, P533
[5] GOLDSMITH N, 1967, RCA REV, V28, P153
[6] HAMMOND ML, 1968, T METALL SOC AIME, V242, P546
[7] PHOSPHOSILICATE GLASS STABILIZATION OF MOS STRUCTURES
KAPLAN, LH
LOWE, ME
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (10) : 1649 - &
[8] CHEMICAL VAPOR DEPOSITION OF SILICATE GLASSES FOR USE WITH SILICON DEVICES .1. DEPOSITION TECHNIQUES
KERN, W
HEIM, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 562 - &
[9] KERN W, 1968, RCA REV, V29, P525
[10] ADVANTAGES OF VAPOR-PLATED PHOSPHOSILICATE FILMS IN LARGE-SCALE INTEGRATED CIRCUIT ARRAYS
SCHLACTER, MM
SCHLEGEL, ES
KEEN, RS
LATHLAEN, RA
SCHNABLE, GL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (12) : 1077 - +