MEASUREMENT OF ADSORPTION ON SEMICONDUCTORS BY ELLIPSOMETRY AND OTHER METHODS

被引：10

作者：

BOOTSMA, GA

MEYER, F

机构：

[1] Philips Research Laboratories, N.V. Philips' Gloeilampenfabrieken, Eindhoven

来源：

SURFACE SCIENCE | 1969年 / 18卷 / 01期

关键词：

D O I：

10.1016/0039-6028(69)90270-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A review is given of a study of the mechanism of the adsorption of oxygen and hydrides, HxA, on clean germanium and silicon surfaces. The results obtained by the following methods are discussed: gas-volumetric measurements, surface conductivity, LEED, calorimetry and ellipsometry. Oxygen reacts under formation of an oxide layer. The adsorption of the hydrides appears to be dissociative and plane-specific. © 1969.

引用

页码：123 / &

共 32 条

[1] MEASUREMENT OF OXYGEN ADSORPTION ON SILICON BYELLIPSOMETRY [J].