NONINTEGER INAS MONOLAYER WELL INAS/GAAS SINGLE QUANTUM WELL STRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION - COMMENT

被引：5

作者：

SATO, M

HORIKOSHI, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 16期

关键词：

D O I：

10.1063/1.102211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1689 / 1689

页数：1

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[1] THERMALLY INDUCED IN/GA INTERDIFFUSION IN INXGA1-XAS/GAAS STRAINED SINGLE QUANTUM WELL GROWN BY LPMOVPE
IIKAWA, F
MOTISUKE, P
BRUM, JA
SACILOTTI, MA
ROTH, AP
MASUT, RA
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 336 - 341
[2] PHOTOLUMINESCENCE FROM HIGHLY-FLAT-INTERFACE INAS/GAAS HETEROSTRUCTURES GROWN BY FLOW-RATE MODULATION EPITAXY
SATO, M
HORIKOSHI, Y
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 936 - 936
[3] INAS MONOMOLECULAR PLANE IN GAAS GROWN BY FLOW-RATE MODULATION EPITAXY
SATO, M
HORIKOSHI, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) : 851 - 855
[4] NONINTEGER INAS MONOLAYER WELL INAS/GAAS SINGLE QUANTUM WELL STRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
TAIRA, K
KAWAI, H
HASE, I
KANEKO, K
WATANABE, N
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (06) : 495 - 496