THEORY OF INTERMEDIATE AND HIGH INJECTION NOISE IN TRANSISTORS

被引：6

作者：

MIN, HS ^{[1
]}

VANVLIET, KM ^{[1
]}

机构：

[1] UNIV MONTREAL,CTR RECH MATH,MONTREAL 101,QUEBEC,CANADA

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 03期

关键词：

D O I：

10.1016/0038-1101(74)90016-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：285 / 300

页数：16

共 13 条

[1]

BAELDE A, 1964, THESIS TU DELFT

[2] ABRUPT P-N JUNCTIONS AT ARBITRARY INJECTION LEVELS [J].

BARBER, HD .

SOLID-STATE ELECTRONICS, 1969, 12 (05) :425-+

[3]

CHENETTE ER, 1962, IREE T ELECTRON DEVI, VED 9, P123

[4] GENERAL TRANSPORT-THEORY OF NOISE IN P-N JUNCTION-LIKE DEVICES .3. JUNCTION NOISE IN P+-N DIODES AT HIGH INJECTION [J].

MIN, HS ;

VANVLIET, KM ;

VANDERZI.A .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 10 (02) :605-&

[5] GENERAL TRANSPORT-THEORY OF NOISE IN P-N JUNCTION-LIKE DEVICES .5. TERMINAL NOISE OF P+-N DIODES AT HIGH INJECTION [J].

MIN, HS ;

VANVLIET, KM .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 11 (02) :653-&

[6] SHOT AND THERMAL NOISE IN GERMANIUM AND SILICON TRANSISTORS AT HIGH-LEVEL CURRENT INJECTIONS [J].

SCHNEIDER, B ;

STRUTT, MJO .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1960, 48 (10) :1731-1739

[7]

TONG A, 1968, IEEE T ELECTRON DEVI, VED15, P307

[8]

TONG A, 1967, THESIS U MINNESOTA

[9]

Van der Ziel A, 1959, FLUCTUATION PHENOMEN

[10] NOISE SOURCES IN TRANSPORT EQUATIONS ASSOCIATED WITH AMBIPOLAR DIFFUSION AND SHOCKLEY-READ RECOMBINATION [J].

VANVLIET, KM .

SOLID-STATE ELECTRONICS, 1970, 13 (05) :649-+

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