A MONOLITHICALLY INTEGRATED DETECTOR-PREAMPLIFIER ON HIGH-RESISTIVITY SILICON

被引：16

作者：

HOLLAND, S

SPIELER, H

机构：

[1] Lawrence Berkeley Laboratory, University of California, Berkeley

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1990年 / 37卷 / 02期

关键词：

D O I：

10.1109/23.106663

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated and characterized. The detector is a fully depleted p-i-n diode and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/√Hz in the white noise regime. Measurements with an Am241 radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm2 detector with on-chip amplifier in an experimental setup with substantial external pickup. Copyright © 1990 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：463 / 468

页数：6

共 13 条

[11] A FRAMEWORK TO EVALUATE TECHNOLOGY AND DEVICE DESIGN ENHANCEMENTS FOR MOS INTEGRATED-CIRCUITS [J].