AN INSITU CHARACTERIZATION OF THE P-INP-IN ELECTROLYTE CONTACT FORMED BY CATHODIC CORROSION OF THE SEMICONDUCTOR

被引：14

作者：

SCHEFOLD, J

机构：

[1] Universität Stuttgart, Institut für Physikalische Elektronik, D-7000 Stuttgart 80

来源：

JOURNAL OF PHYSICAL CHEMISTRY | 1992年 / 96卷 / 22期

关键词：

D O I：

10.1021/j100201a007

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Hydrogen evolution at illuminated p-InP/electrolyte contacts is accompanied by a corrosion reaction leading to indium formation at the semiconductor surface. After this process the electrode response is analyzed in 1 M H2SO4 using current-voltage curves and Mott-Schottky as well as impedance spectroscopic measurements. Mott-Schottky data indicate a shift of the flat-band potential due to In formation whereas barrier heights at the semiconductor surface remain almost constant (phi(B) almost-equal-to 1 eV). Impedance data under photocurrent flow reveal a nearly ideal Schottky contact after separation of the electrochemical charge transfer at the in surface.

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页码：8692 / 8694

页数：3

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