THE INTERACTION OF AG, IN AND AL OVERLAYERS WITH INP (110) - SURFACE AND DIODE STUDIES OF THE EFFECT OF INDIUM INTERLAYERS

被引：14

作者：

ISMAIL, A ^{[1
]}

BRAHIM, AB ^{[1
]}

PALAU, JM ^{[1
]}

LASSABATERE, L ^{[1
]}

LINDAU, I ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

VACUUM | 1986年 / 36卷 / 04期

关键词：

D O I：

10.1016/0042-207X(86)90003-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：217 / 221

页数：5

共 17 条

[1] INVESTIGATION OF THE CU/GAAS(110) INTERFACE FORMATION [J].

BOLMONT, D ;

MERCIER, V ;

CHEN, P ;

LUTH, H ;

SEBENNE, CA .

SURFACE SCIENCE, 1983, 126 (1-3) :509-517

[2] THE KELVIN PROBE METHOD FOR WORK FUNCTION TOPOGRAPHIES - TECHNICAL PROBLEMS AND SOLUTIONS [J].

BONNET, J ;

SOONCKINDT, L ;

LASSABATERE, L .

VACUUM, 1984, 34 (07) :693-698

[3] SYSTEMATICS OF CHEMICAL-STRUCTURE AND SCHOTTKY BARRIERS AT COMPOUND SEMICONDUCTOR METAL INTERFACES [J].

BRILLSON, LJ ;

BRUCKER, CF ;

KATNANI, AD ;

STOFFEL, NG ;

DANIELS, R ;

MARGARITONDO, G .

SURFACE SCIENCE, 1983, 132 (1-3) :212-232

[4] FERMI-LEVEL PINNING AND CHEMICAL-STRUCTURE OF INP-METAL INTERFACES [J].

BRILLSON, LJ ;

BRUCKER, CF ;

KATNANI, AD ;

STOFFEL, NG ;

DANIELS, R ;

MARGARITONDO, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :564-569

[5] ENERGY-LEVELS OF SEMICONDUCTOR SURFACE VACANCIES [J].

DAW, MS ;

SMITH, DL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1028-1031

[6] METAL INP INTERFACE AND SCHOTTKY DIODE FORMATION [J].

ISMAIL, A ;

PALAU, JM ;

LASSABATERE, L .

REVUE DE PHYSIQUE APPLIQUEE, 1984, 19 (03) :205-214

[7]

ISMAIL A, UNPUB SURFACE SCI

[8] STRUCTURE OF THE AL-GAP(110) AND AL-INP(110)INTERFACES [J].

KAHN, A ;

BONAPACE, CR ;

DUKE, CB ;

PATON, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :613-617

[9] STUDY OF THE GAAS-AU AND SI-SIO2 INTERFACE FORMATION BY THE KELVIN METHOD [J].

LASSABATERE, L ;

PALAU, JM ;

VIEUJOTTESTEMALE, E ;

ISMAIL, A ;

RAISIN, C ;

BONNET, J ;

SOONCKINDT, L .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :540-545

[10] CHARGE-TRANSFER TO OXYGEN CHEMISORBED ON CLEAVED GAAS(110) SURFACES [J].

MONCH, W ;

ENNINGHORST, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :942-945

← 1 2 →