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ELECTROCHEMICAL TRANSFER VIA SURFACE-STATES - A NEW FORMULATION FOR THE SEMICONDUCTOR ELECTROLYTE INTERFACE
被引:71
作者
:
CHAZALVIEL, JN
论文数:
0
引用数:
0
h-index:
0
CHAZALVIEL, JN
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1982年
/ 129卷
/ 05期
关键词
:
D O I
:
10.1149/1.2124074
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:963 / 969
页数:7
相关论文
共 28 条
[1]
APPLEBY AJ, 1973, PHYSICAL CHEM 1, V6, P1
[2]
THE CONCEPT OF FERMI LEVEL PINNING AT SEMICONDUCTOR-LIQUID JUNCTIONS - CONSEQUENCES FOR ENERGY-CONVERSION EFFICIENCY AND SELECTION OF USEFUL SOLUTION REDOX COUPLES IN SOLAR DEVICES
BARD, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
BARD, AJ
BOCARSLY, AB
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
BOCARSLY, AB
FAN, FRF
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
FAN, FRF
WALTON, EG
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
WALTON, EG
WRIGHTON, MS
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
WRIGHTON, MS
[J].
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
1980,
102
(11)
: 3671
-
3677
[3]
BARRET C, 1981, THESIS U PARIS SUD
[4]
EFFECT OF CUPRIC ION ON THE ELECTRICAL PROPERTIES OF THE GERMANIUM-AQUEOUS ELECTROLYTE INTERFACE
BODDY, PJ
论文数:
0
引用数:
0
h-index:
0
BODDY, PJ
BRATTAIN, WH
论文数:
0
引用数:
0
h-index:
0
BRATTAIN, WH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(09)
: 812
-
818
[5]
RESIDUAL SURFACE RECOMBINATION ON GERMANIUM ANODES
BODDY, PJ
论文数:
0
引用数:
0
h-index:
0
BODDY, PJ
BRATTAIN, WH
论文数:
0
引用数:
0
h-index:
0
BRATTAIN, WH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(10)
: 1053
-
&
[6]
CHEMICALLY DERIVATIZED N-TYPE SILICON PHOTOELECTRODES - STABILIZATION TO SURFACE CORROSION IN AQUEOUS-ELECTROLYTE SOLUTIONS AND MEDIATION OF OXIDATION REACTIONS BY SURFACE-ATTACHED ELECTROACTIVE FERROCENE REAGENTS
BOLTS, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
BOLTS, JM
BOCARSLY, AB
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
BOCARSLY, AB
PALAZZOTTO, MC
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
PALAZZOTTO, MC
WALTON, EG
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
WALTON, EG
LEWIS, NS
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
LEWIS, NS
WRIGHTON, MS
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
WRIGHTON, MS
[J].
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
1979,
101
(06)
: 1378
-
1385
[7]
P-TYPE GAP AS A SEMICONDUCTING PHOTOELECTRODE
BUTLER, MA
论文数:
0
引用数:
0
h-index:
0
BUTLER, MA
GINLEY, DS
论文数:
0
引用数:
0
h-index:
0
GINLEY, DS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(06)
: 1273
-
1278
[8]
PHOTOCURRENT SPECTROSCOPY OF INTERFACE STATES AT A SEMICONDUCTOR-ELECTROLYTE JUNCTION
CHAZALVIEL, JN
论文数:
0
引用数:
0
h-index:
0
CHAZALVIEL, JN
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(08)
: 1822
-
1826
[9]
SCHOTTKY-BARRIER HEIGHT AND REVERSE CURRENT OF THE N-SI-ELECTROLYTE JUNCTION
CHAZALVIEL, JN
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire de Physique de la Matière Condensée Groupe de Recherche da Centre National de la Recherche Scientifique., Ecole Polytechnique
CHAZALVIEL, JN
[J].
SURFACE SCIENCE,
1979,
88
(01)
: 204
-
220
[10]
A QUANTITATIVE STUDY OF FERMI LEVEL PINNING AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE
CHAZALVIEL, JN
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, CHIM PHYS LAB, F-91405 ORSAY, FRANCE
UNIV PARIS 11, CHIM PHYS LAB, F-91405 ORSAY, FRANCE
CHAZALVIEL, JN
TRUONG, TB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, CHIM PHYS LAB, F-91405 ORSAY, FRANCE
UNIV PARIS 11, CHIM PHYS LAB, F-91405 ORSAY, FRANCE
TRUONG, TB
[J].
JOURNAL OF ELECTROANALYTICAL CHEMISTRY,
1980,
114
(02)
: 299
-
303
←
1
2
3
→
共 28 条
[1]
APPLEBY AJ, 1973, PHYSICAL CHEM 1, V6, P1
[2]
THE CONCEPT OF FERMI LEVEL PINNING AT SEMICONDUCTOR-LIQUID JUNCTIONS - CONSEQUENCES FOR ENERGY-CONVERSION EFFICIENCY AND SELECTION OF USEFUL SOLUTION REDOX COUPLES IN SOLAR DEVICES
BARD, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
BARD, AJ
BOCARSLY, AB
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
BOCARSLY, AB
FAN, FRF
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
FAN, FRF
WALTON, EG
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
WALTON, EG
WRIGHTON, MS
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
WRIGHTON, MS
[J].
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
1980,
102
(11)
: 3671
-
3677
[3]
BARRET C, 1981, THESIS U PARIS SUD
[4]
EFFECT OF CUPRIC ION ON THE ELECTRICAL PROPERTIES OF THE GERMANIUM-AQUEOUS ELECTROLYTE INTERFACE
BODDY, PJ
论文数:
0
引用数:
0
h-index:
0
BODDY, PJ
BRATTAIN, WH
论文数:
0
引用数:
0
h-index:
0
BRATTAIN, WH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(09)
: 812
-
818
[5]
RESIDUAL SURFACE RECOMBINATION ON GERMANIUM ANODES
BODDY, PJ
论文数:
0
引用数:
0
h-index:
0
BODDY, PJ
BRATTAIN, WH
论文数:
0
引用数:
0
h-index:
0
BRATTAIN, WH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(10)
: 1053
-
&
[6]
CHEMICALLY DERIVATIZED N-TYPE SILICON PHOTOELECTRODES - STABILIZATION TO SURFACE CORROSION IN AQUEOUS-ELECTROLYTE SOLUTIONS AND MEDIATION OF OXIDATION REACTIONS BY SURFACE-ATTACHED ELECTROACTIVE FERROCENE REAGENTS
BOLTS, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
BOLTS, JM
BOCARSLY, AB
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
BOCARSLY, AB
PALAZZOTTO, MC
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
PALAZZOTTO, MC
WALTON, EG
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
WALTON, EG
LEWIS, NS
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
LEWIS, NS
WRIGHTON, MS
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
MIT,DEPT ANAT,CAMBRIDGE,MA 02139
WRIGHTON, MS
[J].
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
1979,
101
(06)
: 1378
-
1385
[7]
P-TYPE GAP AS A SEMICONDUCTING PHOTOELECTRODE
BUTLER, MA
论文数:
0
引用数:
0
h-index:
0
BUTLER, MA
GINLEY, DS
论文数:
0
引用数:
0
h-index:
0
GINLEY, DS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(06)
: 1273
-
1278
[8]
PHOTOCURRENT SPECTROSCOPY OF INTERFACE STATES AT A SEMICONDUCTOR-ELECTROLYTE JUNCTION
CHAZALVIEL, JN
论文数:
0
引用数:
0
h-index:
0
CHAZALVIEL, JN
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(08)
: 1822
-
1826
[9]
SCHOTTKY-BARRIER HEIGHT AND REVERSE CURRENT OF THE N-SI-ELECTROLYTE JUNCTION
CHAZALVIEL, JN
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire de Physique de la Matière Condensée Groupe de Recherche da Centre National de la Recherche Scientifique., Ecole Polytechnique
CHAZALVIEL, JN
[J].
SURFACE SCIENCE,
1979,
88
(01)
: 204
-
220
[10]
A QUANTITATIVE STUDY OF FERMI LEVEL PINNING AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE
CHAZALVIEL, JN
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, CHIM PHYS LAB, F-91405 ORSAY, FRANCE
UNIV PARIS 11, CHIM PHYS LAB, F-91405 ORSAY, FRANCE
CHAZALVIEL, JN
TRUONG, TB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11, CHIM PHYS LAB, F-91405 ORSAY, FRANCE
UNIV PARIS 11, CHIM PHYS LAB, F-91405 ORSAY, FRANCE
TRUONG, TB
[J].
JOURNAL OF ELECTROANALYTICAL CHEMISTRY,
1980,
114
(02)
: 299
-
303
←
1
2
3
→