POLARITY OF SMALL (111)GAAS DOMAINS ON (100)SC0.32ER0.68AS FORMED DURING MOLECULAR-BEAM EPITAXIAL-GROWTH

被引：4

作者：

HUGSTED, B ^{[1
]}

TAFTO, J ^{[1
]}

FINSTAD, TG ^{[1
]}

PALMSTROM, CJ ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 18期

关键词：

D O I：

10.1063/1.110461

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molecular-beam epitaxial growth of GaAs on (100)ScxEr1-xAs can result in domains of various orientations. Most of the GaAs domains are of the epitaxial (100) or the twin related (221) orientation. A {lll} orientation is also common. We have studied the orientational relationships of these domains by transmission electron microscopy. The polarity of small {111}GaAs domains on (100)ScErAs have been determined by electron channeling. We observe that the polarity is such that the GaAs [111BAR] direction (as opposed to the [111] one) points outward from the original ScxEr1-xAs(100) surface. We use this observation in discussing possible models of the interface between ScErAs and GaAs.

引用

页码：2499 / 2501

页数：3

共 15 条

[1]

FINSTAD TG, 1991, MATER RES SOC S P, V202, P579

[2]

GLAISHER RW, 1989, EVALUATION ADV SEMIC

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