EFFECT OF ORIENTATION ON THE SCHOTTKY-BARRIER HEIGHT OF THERMODYNAMICALLY STABLE EPITAXIAL METAL GAAS STRUCTURES

被引：38

作者：

PALMSTROM, CJ ^{[1
]}

CHEEKS, TL ^{[1
]}

GILCHRIST, HL ^{[1
]}

ZHU, JG ^{[1
]}

CARTER, CB ^{[1
]}

WILKENS, BJ ^{[1
]}

MARTIN, R ^{[1
]}

机构：

[1] CORNELL UNIV,ITHACA,NY 14853

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1992年 / 10卷 / 04期

关键词：

D O I：

10.1116/1.578120

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The use of thermodynamically stable epitaxial metal/GaAs contacts fabricated by molecular-beam epitaxy has enabled detailed studies of Schottky barrier formation on well characterized and controlled structures. The effects of lattice mismatch, annealing and substrate orientation on the barrier height of Sc1-xErxAs semimetal contacts on n-GaAs are studied. The barrier height could be varied from approximately 1.03 eV for Sc1-xErxAs films grown at 350-degrees-C and annealed at approximately 600-degrees-C on (100) GaAs to approximately 0.63 eV for films grown at approximately 600-degrees-C on (111BAR) GaAs.

引用

页码：1946 / 1952

页数：7

共 82 条

[1] ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS [J].

ALLEN, RE ;

DOW, JD .

PHYSICAL REVIEW B, 1982, 25 (02) :1423-1426

[2] PHASE-STABILITY VERSUS THE LATTICE MISMATCH OF (100)CO1-XGAX THIN-FILMS ON (100)GAAS [J].

BAUGH, DA ;

TALIN, AA ;

WILLIAMS, RS ;

KUO, TC ;

WANG, KL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04) :2154-2157

[3] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].

BIEGELSEN, DK ;

BRINGANS, RD ;

NORTHRUP, JE ;

SWARTZ, LE .

PHYSICAL REVIEW B, 1990, 41 (09) :5701-5706

[4] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[5] UNPINNED SCHOTTKY-BARRIER FORMATION AT METAL GAAS INTERFACES [J].

BRILLSON, LJ ;

VITURRO, RE ;

MAILHIOT, C ;

SHAW, JL ;

TACHE, N ;

MCKINLEY, J ;

MARGARITONDO, G ;

WOODALL, JM ;

KIRCHNER, PD ;

PETTIT, GD ;

WRIGHT, SL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1263-1269

[6] SURFACE TERMINATION OF EPITAXIAL NIAL ON GAAS(001) BY X-RAY PHOTOELECTRON DIFFRACTION [J].

CHAMBERS, SA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :2062-2067

[7] MOLECULAR-BEAM EPITAXIAL-GROWTH OF NIAL ON GAAS(001) [J].

CHAMBERS, SA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :737-741

[8] THE CORRELATION OF MICROSTRUCTURAL PROPERTIES AND THE COURSE OF SCHOTTKY-BARRIER FORMATION AT PD-SI(111) INTERFACES [J].

CLABES, JG ;

MEYER, G ;

VONLOBBECKE, H ;

SIMM, CD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :931-932

[9]

DABIRAN AM, IN PRESS J APPL PHYS

[10] ELECTRONIC-STRUCTURE AND SCHOTTKY-BARRIER HEIGHTS OF (111) NISI2/SI A-TYPE AND B-TYPE INTERFACES [J].

DAS, GP ;

BLOCHL, P ;

ANDERSEN, OK ;

CHRISTENSEN, NE ;

GUNNARSSON, O .

PHYSICAL REVIEW LETTERS, 1989, 63 (11) :1168-1171

← 1 2 3 4 5 6 7 8 9 →