FOURIER-TRANSFORMATION ANALYSIS OF DEEP LEVEL TRANSIENT SIGNALS IN SEMICONDUCTORS

被引：27

作者：

OKUYAMA, M

TAKAKURA, H

HAMAKAWA, Y

机构：

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 07期

关键词：

D O I：

10.1016/0038-1101(83)90026-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：689 / 694

页数：6

共 11 条

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[5]

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[7]

MILNES AG, 1973, DEEP IMPURITIES SEMI, P11

[8] ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY FOR DETERMINATION OF DEEP LEVEL PARAMETERS [J].

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[9]

Oppenheim A., 1975, DIGIT SIGNAL PROCESS

[10] FAST DIGITAL APPARATUS FOR CAPACITANCE TRANSIENT ANALYSIS [J].

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