FAST DIGITAL APPARATUS FOR CAPACITANCE TRANSIENT ANALYSIS

[1] SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS FOR DEEP LEVEL IMPURITY DETERMINATION [J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 375 - 380

[2] CROWELL CR, 1979, 6TH ANN C PHYS COMP

[3] TRAPPING EFFECTS IN AU-N-TYPE GAAS SCHOTTKY BARRIER DIODES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (04) : 503 - +

[4] METHOD FOR THE ANALYSIS OF MULTICOMPONENT EXPONENTIAL DECAY CURVES [J]. JOURNAL OF CHEMICAL PHYSICS, 1959, 31 (04) : 978 - 986

[5] ROLE OF DEFECT CHARGE STATE IN STABILITY OF POINT-DEFECTS IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 16 (01) : 171 - 174

[6] NEW DEVELOPMENTS IN DEFECT STUDIES IN SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1497 - 1505

[7] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[8] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3014 - 3022

[9] MIDDLETON D, 1960, INTRODUCTION STATIST, pCH16

[10] CAPACITANCE TRANSIENT SPECTROSCOPY [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 : 377 - 448

[1] SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS FOR DEEP LEVEL IMPURITY DETERMINATION [J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 375 - 380

[2] CROWELL CR, 1979, 6TH ANN C PHYS COMP

[3] TRAPPING EFFECTS IN AU-N-TYPE GAAS SCHOTTKY BARRIER DIODES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (04) : 503 - +

[4] METHOD FOR THE ANALYSIS OF MULTICOMPONENT EXPONENTIAL DECAY CURVES [J]. JOURNAL OF CHEMICAL PHYSICS, 1959, 31 (04) : 978 - 986

[5] ROLE OF DEFECT CHARGE STATE IN STABILITY OF POINT-DEFECTS IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 16 (01) : 171 - 174

[6] NEW DEVELOPMENTS IN DEFECT STUDIES IN SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1497 - 1505

[7] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[8] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3014 - 3022

[9] MIDDLETON D, 1960, INTRODUCTION STATIST, pCH16

[10] CAPACITANCE TRANSIENT SPECTROSCOPY [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 : 377 - 448