EFFECT OF UNDERCOORDINATION AND OVERCOORDINATION ON THE ELECTRONIC-STRUCTURE OF AMORPHOUS-SILICON

被引:8
作者
MARTINMORENO, L
VERGES, JA
机构
来源
PHYSICAL REVIEW B | 1989年 / 39卷 / 05期
关键词
D O I
10.1103/PhysRevB.39.3445
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3445 / 3448
页数:4
相关论文
共 17 条
[1]   THEORETICAL-STUDY OF THE ATOMIC-STRUCTURE OF SILICON (211), (311), AND (331) SURFACES [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1984, 29 (02) :785-792
[2]   ENERGETICS OF SINGLE DANGLING AND FLOATING BONDS IN AMORPHOUS SI [J].
FEDDERS, PA ;
CARLSSON, AE .
PHYSICAL REVIEW LETTERS, 1987, 58 (11) :1156-1156
[3]  
GARCIAMOLINER F, 1971, THEORY IMPERFECT CRY
[4]   DISORDERED ALLOYS WITH A BETHE LATTICE STRUCTURE - A STUDY OF A NEW MEAN-FIELD APPROXIMATION [J].
GOMEZSANTOS, G ;
VERGES, JA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (33) :5501-5515
[5]  
JOANNOPOULOS JD, 1976, SOLID STATE PHYSICS, V31
[6]   GLASSY QUASITHERMAL DISTRIBUTION OF LOCAL GEOMETRIES AND DEFECTS IN QUENCHED AMORPHOUS-SILICON [J].
KELIRES, PC ;
TERSOFF, J .
PHYSICAL REVIEW LETTERS, 1988, 61 (05) :562-565
[7]   RANDOM BETHE LATTICE APPROACH TO THE MOBILITY EDGES OF HYDROGENATED AND FLUORINATED AMORPHOUS-SILICON [J].
LOUIS, E ;
VERGES, JA .
SOLID STATE COMMUNICATIONS, 1986, 60 (02) :157-160
[8]   ELECTRONIC-STRUCTURE, DEFECT STATES, AND OPTICAL-ABSORPTION OF AMORPHOUS SI1-XNX [0-LESS-THAN-OR-EQUAL-TO-X/(1-X)-LESS-THAN-OR-EQUAL-TO-2] [J].
MARTINMORENO, L ;
MARTINEZ, E ;
VERGES, JA ;
YNDURAIN, F .
PHYSICAL REVIEW B, 1987, 35 (18) :9683-9692
[9]   GAP STATES IN AMORPHOUS-SILICON - DANGLING AND FLOATING BONDS [J].
PANTELIDES, ST .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :79-82
[10]   MECHANISMS FOR PECULIAR LOW-TEMPERATURE PHENOMENA IN HYDROGENATED AMORPHOUS-SILICON [J].
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1987, 58 (13) :1344-1347