SHORT-CHANNEL EFFECTS IN MOSFETS AT LIQUID-NITROGEN TEMPERATURE

被引：39

作者：

WOO, JCS ^{[1
]}

PLUMMER, JD ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 07期

关键词：

D O I：

10.1109/T-ED.1986.22607

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1012 / 1019

页数：8

共 24 条

[1] GENERALIZED GUIDE FOR MOSFET MINIATURIZATION [J].

BREWS, JR ;

FICHTNER, W ;

NICOLLIAN, EH ;

SZE, SM .

ELECTRON DEVICE LETTERS, 1980, 1 (01) :2-4

[2]

FU JS, 1984, IEEE T ELECTRON DEV, V31, P440, DOI 10.1109/T-ED.1984.21548

[3] BEHAVIOR OF ELECTRICALLY SMALL DEPLETION MODE MOSFETS AT LOW-TEMPERATURE [J].

GAENSSLEN, FH ;

JAEGER, RC .

SOLID-STATE ELECTRONICS, 1981, 24 (03) :215-220

[4] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION [J].

GAENSSLEN, FH ;

RIDEOUT, VL ;

WALKER, EJ ;

WALKER, JJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :218-229

[5] TEMPERATURE-DEPENDENT THRESHOLD BEHAVIOR OF DEPLETION MODE MOSFETS [J].

GAENSSLEN, FH ;

JAEGER, RC .

SOLID-STATE ELECTRONICS, 1979, 22 (04) :423-430

[6] NONPLANAR VLSI DEVICE ANALYSIS USING THE SOLUTION OF POISSON EQUATION [J].

GREENFIELD, JA ;

DUTTON, RW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1520-1532

[7]

HANAMURA S, 1983, S VLSI TECHNOL, P46

[8]

HENNING AK, 1985, IEDM, pIVB4

[9] MINIATURIZATION OF SI MOSFET AT 77-K [J].

KAMGAR, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (08) :1226-1228

[10]

Kato I., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P601

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