OXYGEN SEGREGATION IN CZOCHRALSKI SILICON GROWTH

被引：28

作者：

LIN, W

HILL, DW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 02期

关键词：

D O I：

10.1063/1.332115

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1082 / 1085

页数：4

共 12 条

[1]

ABE T, 1981, SEMICONDUCTOR SILICO, P59

[2]

BENSON KE, 1981, SEMICONDUCTOR SILICO, P33

[3] THE DISTRIBUTION OF SOLUTE IN CRYSTALS GROWN FROM THE MELT .1. THEORETICAL [J].

BURTON, JA ;

PRIM, RC ;

SLICHTER, WP .

JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) :1987-1991

[4] DYNAMIC OXYGEN EQUILIBRIUM IN SILICON MELTS DURING CRYSTAL-GROWTH BY THE CZOCHRALSKI TECHNIQUE [J].

CARLBERG, T ;

KING, TB ;

WITT, AF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) :189-193

[5]

Ciszek T. F., 1969, Semiconductor silicon, P156

[6]

Kodera H., 1963, JAP J APPL PHYS, V2, P212, DOI [10.1143/JJAP.2.212, DOI 10.1143/JJAP.2.212]

[7] PROPERTIES OF UNIFORM OXYGEN CZOCHRALSKI SILICON-CRYSTALS [J].

LIN, W ;

PEARCE, CW .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5540-5543

[8]

LIN W, 1983, SILICON PROCESSING

[9] EFFECT OF MICROSCOPIC GROWTH-RATE ON OXYGEN MICROSEGREGATION AND SWIRL DEFECT DISTRIBUTION IN CZOCHRALSKI-GROWN SILICON [J].

MURGAI, A ;

GATOS, HC ;

WESTDORP, WA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (12) :2240-2245

[10]

Murgai A, 1981, SEMICONDUCTOR SILICO, P113

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