PROPERTIES OF UNIFORM OXYGEN CZOCHRALSKI SILICON-CRYSTALS

被引：14

作者：

LIN, W ^{[1
]}

PEARCE, CW ^{[1
]}

机构：

[1] WESTERN ELECT CO INC, ALLENTOWN, PA 18103 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 10期

关键词：

D O I：

10.1063/1.327474

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5540 / 5543

页数：4

共 14 条

[1] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J].

DASH, WC .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) :1193-1195

[2] PRECIPITATION OF OXYGEN IN SILICON [J].

FREELAND, PE ;

JACKSON, KA ;

LOWE, CW ;

PATEL, JR .

APPLIED PHYSICS LETTERS, 1977, 30 (01) :31-33

[3] INTERACTIONS BETWEEN OXYGEN AND ACCEPTOR ELEMENTS IN SILICON [J].

FULLER, CS ;

DOLEIDEN, FH .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) :1264-1265

[4]

HAMMOND ML, 1978, SOLID STATE TECHNOL, V21, P68

[5] DISLOCATION PINNING EFFECT OF OXYGEN-ATOMS IN SILICON [J].

HU, SM .

APPLIED PHYSICS LETTERS, 1977, 31 (02) :53-55

[6]

LIN WC, UNPUBLISHED

[7]

MOERSCHEL KG, 1977, SEMICONDUCTOR SILICO, P170

[8]

Pearce C.W., 1977, SEMICONDUCTOR SILICO, P606

[9] IDENTIFICATION, ANNIHILATION, AND SUPPRESSION OF NUCLEATION SITES RESPONSIBLE FOR SILICON EPITAXIAL STACKING-FAULTS [J].

ROZGONYI, GA ;

DEYSHER, RP ;

PEARCE, CW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (12) :1910-1915

[10]

ROZGONYI GA, 1977, APPL PHYS LETT, V31, P343, DOI 10.1063/1.89693

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