DIFFERENTIAL PHOTOCURRENT TRANSIENT MEASUREMENTS IN A-SI-H

[1] DETERMINATION OF THE DENSITY OF GAP STATES - FIELD-EFFECT AND SURFACE-ADSORPTION [J]. SOLAR CELLS, 1980, 2 (03): : 289 - 300

[2] STUDY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT AND STEADY-STATE PHOTOCONDUCTIVITY MEASUREMENTS [J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7460 - 7465

[3] JACKSON WB, 1983, B AM PHYS SOC, V28, P258

[4] COMPARISON OF THE DISPERSION PARAMETERS FROM TIME-OF-FLIGHT AND PHOTOINDUCED MIDGAP ABSORPTION-MEASUREMENTS ON SPUTTERED A-SI-H [J]. SOLID STATE COMMUNICATIONS, 1982, 42 (07) : 533 - 535

[5] ENERGY-DEPENDENCE OF ELECTRON-CAPTURE CROSS-SECTION OF GAP STATES IN N-TYPE ALPHA-SI-H [J]. PHYSICAL REVIEW B, 1982, 25 (06): : 4313 - 4316

[6] TRANSIENT PHOTOCONDUCTIVITY AND PHOTOINDUCED OPTICAL-ABSORPTION IN AMORPHOUS-SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (01): : 23 - 62

[7] RECOMBINATION IN DISORDERED SOLIDS [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 547 - 550

[8] TRAP-CONTROLLED DISPERSIVE TRANSPORT AND EXPONENTIAL BAND TAILS IN AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1981, 24 (10): : 6189 - 6192

[9] TIEDJE T, 1980, SOLID STATE COMMUN, V37, P49

[1] DETERMINATION OF THE DENSITY OF GAP STATES - FIELD-EFFECT AND SURFACE-ADSORPTION [J]. SOLAR CELLS, 1980, 2 (03): : 289 - 300

[2] STUDY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT AND STEADY-STATE PHOTOCONDUCTIVITY MEASUREMENTS [J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7460 - 7465

[3] JACKSON WB, 1983, B AM PHYS SOC, V28, P258

[4] COMPARISON OF THE DISPERSION PARAMETERS FROM TIME-OF-FLIGHT AND PHOTOINDUCED MIDGAP ABSORPTION-MEASUREMENTS ON SPUTTERED A-SI-H [J]. SOLID STATE COMMUNICATIONS, 1982, 42 (07) : 533 - 535

[5] ENERGY-DEPENDENCE OF ELECTRON-CAPTURE CROSS-SECTION OF GAP STATES IN N-TYPE ALPHA-SI-H [J]. PHYSICAL REVIEW B, 1982, 25 (06): : 4313 - 4316

[6] TRANSIENT PHOTOCONDUCTIVITY AND PHOTOINDUCED OPTICAL-ABSORPTION IN AMORPHOUS-SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (01): : 23 - 62

[7] RECOMBINATION IN DISORDERED SOLIDS [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 547 - 550

[8] TRAP-CONTROLLED DISPERSIVE TRANSPORT AND EXPONENTIAL BAND TAILS IN AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1981, 24 (10): : 6189 - 6192

[9] TIEDJE T, 1980, SOLID STATE COMMUN, V37, P49