MASS-SPECTROMETRIC STUDIES OF PLASMA-ETCHING OF SILICON-NITRIDE

被引：32

作者：

CLARKE, PE

FIELD, D

HYDES, AJ

KLEMPERER, DF

SEAKINS, MJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 06期

关键词：

D O I：

10.1116/1.582949

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1614 / 1619

页数：6

共 26 条

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