SI(100)2 X-1 - THE CLEAN AND AMMONIA EXPOSED SURFACE STUDIED WITH HIGH-RESOLUTION CORE-LEVEL SPECTROSCOPY

被引:33
作者
LARSSON, CUS [1 ]
ANDERSSON, CBM [1 ]
PRINCE, NP [1 ]
FLODSTROM, AS [1 ]
机构
[1] ROYAL INST TECHNOL,MAT SCI,S-10044 STOCKHOLM 70,SWEDEN
关键词
D O I
10.1016/0039-6028(92)90899-H
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
High resolution core-level spectroscopy was utilized to study the clean and NH3 exposed Si(100)2 x 1 surface. The clean surface exhibits two approximately equal intensity surface core-level components at -0.48 and 0.28 eV binding energy referred to the bulk component. NH3 exposure at 300 K induces two surface core-level components at 0.31 and 0.72 eV relative binding energy that can be assigned to surface Si atoms bonded to H and NH2, respectively. Alternative interpretations for the adsorption based on different interpretations of the clean surface core-level spectra are discussed. The steps between adsorption at 300 K and the beginning of subsurface silicon nitride formation by annealing the surface up to 1000 K are investigated.
引用
收藏
页码:349 / 354
页数:6
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