CONTACTLESS MEASUREMENT OF PHOTOINDUCED CARRIER LIFETIME AND INJECTION LEVEL IN SILICON-WAFER USING ADDITIONAL EDDY-CURRENT

被引:8
作者
MAEKAWA, T [1 ]
INOUE, S [1 ]
USAMI, A [1 ]
机构
[1] NAGOYA INST TECHNOL,DEPT ELECTR,SHOWA KU,NAGOYA,AICHI 466,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 06期
关键词
D O I
10.1143/JJAP.22.968
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:968 / 974
页数:7
相关论文
共 19 条
[1]   NONDESTRUCTIVE PHOTOVOLTAIC TECHNIQUE FOR MEASUREMENT OF RESISTIVITY GRADIENTS IN CIRCULAR SEMICONDUCTOR WAFERS [J].
BLACKBURN, DL ;
SCHAFFT, HA ;
SWARTZENDRUBER, LJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (12) :1773-+
[2]  
BLAIS PD, 1980, ASTM STP AM SOC TEST, V712, P148
[3]  
Curtis H. W., 1980, ASTM STP, V712, P210
[4]   RECOMBINATION WITHIN DISORDERED REGIONS - INFLUENCE OF BARRIER HEIGHT ON RECOMBINATION RATE AND INJECTION LEVEL EFFECTS [J].
CURTIS, OL ;
SROUR, JR .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (06) :196-203
[5]   MINORITY CARRIER RECOMBINATION IN NEUTRON IRRADIATED SILICON [J].
GREGORY, BL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1969, NS16 (06) :53-+
[6]   SIMPLE CONTACTLESS METHOD FOR MEASURING DECAY TIME OF PHOTOCONDUCTIVITY IN SILICON [J].
LICHTENSTEIN, RM ;
WILLARD, HJ .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1967, 38 (01) :133-+
[7]   NONDESTRUCTIVE METHOD FOR MEASURING THE SPATIAL-DISTRIBUTION OF MINORITY-CARRIER LIFETIME IN SILICON WAFER [J].
MADA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (11) :2171-2172
[8]  
Maekawa T., 1981, Oyo Buturi, V50, P915
[9]  
MEESE JM, 1978, NEUTRON TRANSMUTATIO, P317
[10]   EFFECTS OF NEUTRON IRRADIATION IN P-TYPE SILICON [J].
NAKASHIMA, K ;
INUISHI, Y .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (02) :397-+