SIMULATION OF BACKSCATTERED ELECTRON SIGNALS FOR X-RAY MASK INSPECTION

被引：10

作者：

ROSENFIELD, MG

NEUREUTHER, AR

VISWANATHAN, R

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 04期

关键词：

D O I：

10.1116/1.582725

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1358 / 1363

页数：6

共 8 条

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[2] LIN YC, 1981, IEEE T ELECTRON DEV, V28, P1397
[3] LIN YC, 1981, THESIS U CALIFORNIA
[4] ROSENFIELD MG, 1982, P MICROCIRCUIT ENG
[5] SIMPSON RA, 1982, SPIE, V334
[6] ELECTRON-BEAM LITHOGRAPHY USING VECTOR-SCAN TECHNIQUES
SPETH, AJ
WILSON, AD
KERN, A
CHANG, THP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1235 - 1239
[7] MONTE-CARLO CALCULATIONS OF BACKSCATTERED ELECTRONS AT REGISTRATION MARKS
STEPHANI, D
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1739 - 1742
[8] STUDIES ON AN ELECTRON-BEAM MASK-DEFECT INSPECTION SYSTEM
WADA, Y
HISAMOTO, Y
MIZUKAMI, K
MIGITAKA, M
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (01): : 36 - 39