MODIFICATIONS IN THE INTERFACIAL REACTION BETWEEN THIN-FILMS OF TI AND AL DUE TO ALLOYING THE AL WITH SI

The interfacial reaction between Al(Si) and Ti thin films has been studied and compared to that for pure Al and Ti. The experimental techniques employed were Rutherford backscattering spectrometry, transmission electron microscopy, and measurements of the sheet resistivity. It has been found that alloying the Al with Si delays the onset temperature for Al3Ti formation (430 °C for 1 % Si compared to 300 °C for pure Al), decreases significantly the reaction rate, and causes a nonuniform and nonplanar interaction. The effects of the Si concentration and the annealing environment have also been studied. A model based on processes which impede the transport of Ti atoms to the reaction front can explain the obtained results. © 1990, American Vacuum Society. All rights reserved.