SI-GE STRAINED LAYER SUPERLATTICES

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (22) : 2441 - 2444

[2] TWO-DIMENSIONAL ELECTRON-SYSTEMS IN SI/SIXGE(1-X) STRAINED-LAYER SUPERLATTICES [J]. SURFACE SCIENCE, 1986, 174 (1-3) : 640 - 645

[3] ABSTREITER G, 1987, 18TH P INT C PHYS SE, V1, P739

[4] ABSTREITER G, 1986, SPRINGER SERIES SOLI, V67, P130

[5] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[6] BEAN JC, 1985, ELECTROCHEMICAL SOC, V85

[7] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J]. PHYSICAL REVIEW, 1958, 109 (03): : 695 - 710

[8] DISPERSION OF FOLDED PHONONS IN SI/SIXGE1-X SUPERLATTICES [J]. SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (05) : 451 - 454

[9] FOLDED ACOUSTIC PHONONS IN SI-SIXGE1-X SUPERLATTICES [J]. PHYSICAL REVIEW B, 1986, 33 (08): : 5928 - 5930

[10] INSITU INVESTIGATION OF BAND BENDING DURING FORMATION OF GAAS-GE HETEROSTRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (02) : 141 - 144

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (22) : 2441 - 2444

[2] TWO-DIMENSIONAL ELECTRON-SYSTEMS IN SI/SIXGE(1-X) STRAINED-LAYER SUPERLATTICES [J]. SURFACE SCIENCE, 1986, 174 (1-3) : 640 - 645

[3] ABSTREITER G, 1987, 18TH P INT C PHYS SE, V1, P739

[4] ABSTREITER G, 1986, SPRINGER SERIES SOLI, V67, P130

[5] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[6] BEAN JC, 1985, ELECTROCHEMICAL SOC, V85

[7] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J]. PHYSICAL REVIEW, 1958, 109 (03): : 695 - 710

[8] DISPERSION OF FOLDED PHONONS IN SI/SIXGE1-X SUPERLATTICES [J]. SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (05) : 451 - 454

[9] FOLDED ACOUSTIC PHONONS IN SI-SIXGE1-X SUPERLATTICES [J]. PHYSICAL REVIEW B, 1986, 33 (08): : 5928 - 5930

[10] INSITU INVESTIGATION OF BAND BENDING DURING FORMATION OF GAAS-GE HETEROSTRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (02) : 141 - 144