GAAS/(GAAL)AS LOC LASERS GROWN BY MOCVD

被引：3

作者：

GLEW, RW

GARRETT, B

WHITEAWAY, JEA

THRUSH, EJ

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90359-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：613 / 620

页数：8

共 7 条

[1]

GARRETT B, UNPUB IEEE P J

[2] ZINC DOPING OF MOCVD GAAS [J].

GLEW, RW .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :44-47

[3] EFFICIENT LARGE OPTICAL CAVITY INJECTION LASER [J].

LOCKWOOD, HF ;

KRESSEL, H ;

SOMMERS, HS ;

HAWRYLO, FZ .

APPLIED PHYSICS LETTERS, 1970, 17 (11) :499-&

[4] (GAAL) AS LASERS WITH A HETEROSTRUCTURE FOR OPTICAL CONFINEMENT AND ADDITIONAL HETEROJUNCTIONS FOR EXTREME CARRIER CONFINEMENT [J].

THOMPSON, GH ;

KIRKBY, PA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :311-318

[5] NARROW-BEAM 5-LAYER (GAAL)AS/GAAS HETEROSTRUCTURE LASERS WITH LOW THRESHOLD AND HIGH PEAK POWER [J].

THOMPSON, GHB ;

HENSHALL, GD ;

WHITEAWAY, JEA ;

KIRKBY, PA .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1501-1514

[6] EVIDENCE FOR TRANSIENT COMPOSITION VARIATIONS AT GAAS/GAL-XALXAS HETEROSTRUCTURE INTERFACES PREPARED BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

THRUSH, EJ ;

WALEEVANS, G ;

WHITEAWAY, JEA ;

LAMB, BL ;

WIGHT, DR ;

CHEW, NG ;

CULLIS, AG ;

GRIFFITHS, RJM .

JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (06) :969-988

[7] PERFORMANCE AND CHARACTERIZATION OF GAAS-(GAAL)AS DOUBLE HETEROJUNCTION LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

WHITEAWAY, JEA ;

THRUSH, EJ .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1528-1536

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