PERFORMANCE AND CHARACTERIZATION OF GAAS-(GAAL)AS DOUBLE HETEROJUNCTION LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：11

作者：

WHITEAWAY, JEA

THRUSH, EJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 03期

关键词：

D O I：

10.1063/1.329792

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1528 / 1536

页数：9

共 16 条

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[3] VERY LOW THRESHOLD GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METAL ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD .

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[6] THRESHOLD TEMPERATURE CHARACTERISTICS OF DOUBLE HETEROSTRUCTURE GA1-XALXAS LASERS [J].

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[7]

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[8] RADIATION FROM A SOLID-STATE LASER [J].

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[9] OBLIQUITY FACTOR FOR RADIATION FROM SOLID-STATE LASER [J].

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[10] GAIN-CURRENT RELATION FOR GAAS LASERS WITH N-TYPE AND UNDOPED ACTIVE LAYERS [J].

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