PHOTO-METAL ORGANIC VAPOR-PHASE EPITAXY - A LOW-TEMPERATURE METHOD FOR THE GROWTH OF CDXHG1-XTE

被引:32
作者
IRVINE, SJC
GIESS, J
MULLIN, JB
BLACKMORE, GW
DOSSER, OD
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 05期
关键词
D O I
10.1116/1.582964
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1450 / 1455
页数:6
相关论文
共 16 条
[1]  
BENEKING H, 1984, CHEM PHYS, V39, P188
[2]   MEASUREMENT OF THE ELECTRONIC-SPECTRA OF PHYSISORBED MOLECULAR LAYERS [J].
CHEN, CJ ;
OSGOOD, RM .
CHEMICAL PHYSICS LETTERS, 1983, 98 (04) :363-368
[3]   LASER MICROPHOTOCHEMISTRY FOR USE IN SOLID-STATE ELECTRONICS [J].
EHRLICH, DJ ;
OSGOOD, RM ;
DEUTSCH, TF .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (11) :1233-1243
[4]   CHARACTERIZATION OF CDXHG1-XTE P-TYPE LAYERS GROWN BY MBE [J].
FAURIE, JP ;
MILLION, A ;
PIAGUET, J .
JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :10-14
[5]   CDXHG1-XTE N-TYPE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
FAURIE, JP ;
MILLION, A .
APPLIED PHYSICS LETTERS, 1982, 41 (03) :264-266
[6]   LATEST DEVELOPMENTS IN THE GROWTH OF CDXHG1-XTE AND CDTE-HGTE SUPER-LATTICES BY MOLECULAR-BEAM EPITAXY [J].
FAURIE, JP ;
MILLION, A ;
BOCH, R ;
TISSOT, JL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1593-1597
[7]   MECHANISM OF ENERGY-TRANSFER IN TRIPLET MERCURY PHOTOSENSITIZATION OF PARAFFINS [J].
GUNNING, HE ;
CAMPBELL, JM ;
SANDHU, HS ;
STRAUSZ, OP .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1973, 95 (03) :746-751
[8]   A STUDY OF TRANSPORT AND PYROLYSIS IN THE GROWTH OF CDXHG1-XTE BY MOVPE [J].
IRVINE, SJC ;
TUNNICLIFFE, J ;
MULLIN, JB .
JOURNAL OF CRYSTAL GROWTH, 1983, 65 (1-3) :479-484
[9]   PHOTOSENSITIZATION - A STIMULANT FOR THE LOW-TEMPERATURE GROWTH OF EPITAXIAL HGTE [J].
IRVINE, SJC ;
MULLIN, JB ;
TUNNICLIFFE, J .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :188-193
[10]   THE GROWTH BY MOVPE AND CHARACTERIZATION OF CDXHG1-XTE [J].
IRVINE, SJC ;
MULLIN, JB .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :107-115