LIQUID-PHASE EPITAXIAL-GROWTH OF THIN GAAS LAYERS FROM SUPERCOOLED SOLUTIONS

被引:27
作者
TOYODA, N [1 ]
MIHARA, M [1 ]
HARA, T [1 ]
机构
[1] MATSUSHITA RES INST TOKYO INCORP,TAMA,KAWASAKI,JAPAN
关键词
D O I
10.1063/1.322668
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:443 / 448
页数:6
相关论文
共 23 条
[1]   SUBSTRATE ORIENTATION AND SURFACE MORPHOLOGY OF GAAS LIQUID-PHASE EPITAXIAL LAYERS [J].
BAUSER, E ;
FRIK, M ;
LOECHNER, KS ;
SCHMIDT, L ;
ULRICH, R .
JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :148-153
[2]  
Brice JC., 1973, GROWTH CRYSTALS LIQU
[3]   SOME OBSERVATIONS OF SURFACE MORPHOLOGIES OF GAAS LAYERS GROWN BY LIQUID-PHASE EPITAXY [J].
CROSSLEY, I ;
SMALL, MB .
JOURNAL OF CRYSTAL GROWTH, 1973, 19 (03) :160-168
[4]   DETERMINATION OF UNDERCOOLING NECESSARY TO INITIATE EPITAXIAL-GROWTH OF GAAS FROM SOLUTION IN GA [J].
CROSSLEY, I ;
SMALL, MB .
JOURNAL OF CRYSTAL GROWTH, 1972, 15 (04) :275-&
[5]  
Donahue J. A., 1970, Journal of Crystal Growth, V7, P221, DOI 10.1016/0022-0248(70)90014-X
[7]   HOMOGENEOUS SOLUTION GROWN EPITAXIAL GAAS BY TIN DOPING [J].
HARRIS, JS ;
SNYDER, WL .
SOLID-STATE ELECTRONICS, 1969, 12 (05) :337-+
[8]  
HSICH JJ, 1974, J CRYST GROWTH, V27, P49
[9]   IMPROVED SURFACE QUALITY OF SOLUTION GROWN GAAS AND PB1-XSNXTE EPITAXIAL LAYERS - NEW TECHNIQUE [J].
LONGO, JT ;
HARRIS, JS ;
CHU, JC ;
GERTNER, ER .
JOURNAL OF CRYSTAL GROWTH, 1972, 15 (02) :107-&
[10]  
MATTES BL, 1974, J CRYST GROWTH, V27, P133