RADIATION-HARDENED JFET DEVICES AND CMOS CIRCUITS FABRICATED IN SOI FILMS

被引：17

作者：

TSAUR, BY ^{[1
]}

SFERRINO, VJ ^{[1
]}

CHOI, HK ^{[1
]}

CHEN, CK ^{[1
]}

MOUNTAIN, RW ^{[1
]}

SCHOTT, JT ^{[1
]}

SHEDD, WM ^{[1
]}

LAPIERRE, DC ^{[1
]}

BLANCHARD, R ^{[1
]}

机构：

[1] USAF, ROME AIR DEV CTR, BEDFORD, MA 01731 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/TNS.1986.4334607

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1372 / 1376

页数：5

共 9 条

[1]

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[2] TOTAL DOSE RADIATION-BIAS EFFECTS IN LASER-RECRYSTALLIZED SOI MOSFETS [J].

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[3] TRANSIENT RADIATION EFFECTS IN SOI MEMORIES [J].

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[4] GRAPHITE-STRIP-HEATER ZONE-MELTING RECRYSTALLIZATION OF SI FILMS [J].

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[5] SIMOX TECHNOLOGY AND ITS APPLICATION TO CMOS LSIS [J].

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[6]

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[7]

TSAUR BY, 1986, IEEE ELECTR DEVICE L, V7, P324, DOI 10.1109/EDL.1986.26388

[8] EFFECTS OF IONIZING-RADIATION ON SOI/CMOS DEVICES FABRICATED IN ZONE-MELTING-RECRYSTALLIZED SI FILMS ON SIO2 [J].

TSAUR, BY ;

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IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) :238-240

[9] EFFECTS OF IONIZING-RADIATION ON N-CHANNEL MOSFETS FABRICATED IN ZONE-MELTING-RECRYSTALLIZED SI FILMS ON SIO2 [J].

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FAN, JCC ;

TURNER, GW ;

SILVERSMITH, DJ .

ELECTRON DEVICE LETTERS, 1982, 3 (07) :195-197

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