THE EFFECTS OF STRAIN ON THE CONFINEMENT PROFILE OF DISORDERED INGAAS/GAAS SINGLE QUANTUM-WELLS

被引：16

作者：

MICALLEF, J

LI, EH

WEISS, BL

机构：

[1] Department of Electronic and Electrical Engineering, University of Surrey, Guildford

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1993年 / 13卷 / 01期

关键词：

D O I：

10.1006/spmi.1993.1024

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effects of strain on the carrier confinement profile of disordered InGaAs/GaAs single quantum wells, assuming an error function compositional profile after interdiffusion, are studied here. Details are given showing how strain and disorder modify the confinement profile, the ground state transition energy and the strain-induced heavy hole-light hole band edge splitting. The shape of the confinement profile of disordered InGaAs/GaAs quantum well structures is shown to be more sensitive to the indium content than to the width of the as-grown quantum well. © 1993 Academic Press. All rights reserved.

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页码：125 / 132

页数：8

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