PHOTOCURRENT MULTIPLICATION IN ION-IMPLANTED LATERAL IN0.2GA0.8AS/GAAS STRAINED-LAYER SUPERLATTICE PHOTODETECTORS

被引：19

作者：

BULMAN, GE

MYERS, DR

ZIPPERIAN, TE

DAWSON, LR

WICZER, JJ

BIEFELD, RM

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 07期

关键词：

D O I：

10.1063/1.96020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：733 / 735

页数：3

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