INTEGRATED OPTICAL-DEVICES OF INGAASP INP HETEROJUNCTION PHOTOTRANSISTOR AND INNER STRIPE LIGHT-EMITTING DIODE

被引：14

作者：

SASAKI, A

YANO, H

FUJITA, S

TAKEDA, Y

机构：

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1985年 / 3卷 / 06期

关键词：

D O I：

10.1109/JLT.1985.1074339

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1264 / 1269

页数：6

共 17 条

[1] MONOLITHIC GAALAS-GAAS INFRARED-TO-VISIBLE WAVELENGTH CONVERTER WITH OPTICAL POWER AMPLIFICATION [J].

BENEKING, H ;

GROTE, N ;

SVILANS, MN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (04) :404-407

[2] FULL SOLID-STATE IMAGE CONVERTER BASED ON INTEGRATION OF PHOTOTRANSISTORS AND LEDS [J].

BENEKING, H .

ELECTRON DEVICE LETTERS, 1981, 2 (04) :99-100

[3] GAAS-GAALAS PHOTOTRANSISTOR-LASER LIGHT AMPLIFIER [J].

BENEKING, H ;

GROTE, N ;

ROTH, W ;

SVILANS, MN .

ELECTRONICS LETTERS, 1980, 16 (15) :602-603

[4] MONOLITHIC INTEGRATION OF INGAASP/INP LED AND TRANSISTOR - A LIGHT-COUPLED BISTABLE ELECTRO-OPTICAL DEVICE [J].

GROTHE, H ;

PROEBSTER, W .

ELECTRONICS LETTERS, 1983, 19 (06) :194-196

[5]

HAMAGUCHI N, 1984, 4TH P SENS S, P221

[6] LIQUID-PHASE EPITAXIAL-GROWTH OF INGAAS ON INP [J].

SANKARAN, R ;

MOON, RL ;

ANTYPAS, GA .

JOURNAL OF CRYSTAL GROWTH, 1976, 33 (02) :271-280

[7] INGAASP-INP HETEROJUNCTION PHOTOTRANSISTORS AND LIGHT AMPLIFIERS [J].

SASAKI, A ;

KUZUHARA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) :L283-L286

[8] HIGH-CURRENT INGAASP-INP PHOTOTRANSISTORS AND SOME MONOLITHIC OPTICAL-DEVICES [J].

SASAKI, A ;

MATSUDA, K ;

KIMURA, Y ;

FUJITA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1382-1388

[9] OPTOELECTRONIC INTEGRATED DEVICE WITH LIGHT AMPLIFICATION AND OPTICAL BISTABILITY [J].

SASAKI, A ;

TANEYA, M ;

YANO, H ;

FUJITA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) :805-811

[10]

SASAKI A, 1979, Patent No. 107280

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