WAVELENGTH TUNABLE 2-PAD RIDGE-WAVE-GUIDE DISTRIBUTED-BRAGG-REFLECTOR INGAAS-GAAS QUANTUM-WELL LASERS

被引：12

作者：

SMITH, GM

HUGHES, JS

LAMMERT, RM

OSOWSKI, ML

COLEMAN, JJ

机构：

[1] Microelctronics Laboratory University of Illinois, Urbana, IL 61801

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 16期

关键词：

SEMICONDUCTOR QUANTUM WELLS; DISTRIBUTED BRAGG REFLECTOR LASERS;

D O I：

10.1049/el:19940916

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carrier injection in the grating section is used to tune the emission wavelength of a single growth step, single frequency, ridge waveguide InGaAs/GaAs quantum well distributed. Bragg reflector laser with two top contacts. Single longitudinal mode emission with over 30dB of sidemode suppression is observed throughout a tuning range of 6 nm with 60 mA of injection current to the grating section. The tuning mechanism for these devices is dominated by current injection heating rather than carrier depression of the refractive index.

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收藏

页码：1313 / 1314

页数：2

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