RIDGE-WAVE-GUIDE DISTRIBUTED-BRAGG-REFLECTOR INGAAS/GAAS QUANTUM-WELL LASERS

被引：10

作者：

SMITH, GM

HUGHES, JS

OSOWSKI, ML

FORBES, DV

COLEMAN, JJ

机构：

[1] Microelectronics Laboratory, University of Illinois, Urbana, IL 61801

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 08期

关键词：

DISTRIBUTED BRAGG REFLECTOR LASERS; LASERS;

D O I：

10.1049/el:19940426

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single growth step ridge waveguide InGaAs/GaAs quantum well laser with one third-order distributed Bragg reflector (DBR) and one cleaved facet is described. The DBR is fabricated with direct write electron beam lithography and transferred into the epilayers by reactive ion etching. These devices operate on a single longitudinal and fundamental lateral mode, with a threshold current of 23mA and more than 30dB of sidemode suppression.

引用

收藏

页码：651 / 653

页数：3

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