METALORGANIC CHEMICAL VAPOR-DEPOSITION

[1] SE DOPING MECHANISMS IN MOCVD GAAS-LAYERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (10): : L815 - L817

[2] DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 172 - 178

[3] THE USE OF A METALORGANIC COMPOUND FOR THE GROWTH OF INP-EPITAXIAL LAYERS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 185 - 192

[4] BEUCHET G, 1985, SEMICONDUCT SEMIMET, V22, P261

[5] GROWTH OF HIGH-QUALITY GAAS USING TRIMETHYLGALLIUM AND DIETHYLARSINE [J]. APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1194 - 1196

[6] BHAT R, 1981, 9TH P INT S GALL ARS, P101

[7] PYROLYSIS OF DISILANE AND RATE CONSTANTS OF SILENE INSERTION REACTIONS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1971, 321 (1546): : 341 - &

[8] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703

[9] CASEY HC, 1978, HETEROSTRUCTURE LA B, P1

[10] TEMPERATURE EFFECTS ON CARBON AND ZINC INCORPORATIONS IN GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) : 442 - 444

[1] SE DOPING MECHANISMS IN MOCVD GAAS-LAYERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (10): : L815 - L817

[2] DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 172 - 178

[3] THE USE OF A METALORGANIC COMPOUND FOR THE GROWTH OF INP-EPITAXIAL LAYERS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 185 - 192

[4] BEUCHET G, 1985, SEMICONDUCT SEMIMET, V22, P261

[5] GROWTH OF HIGH-QUALITY GAAS USING TRIMETHYLGALLIUM AND DIETHYLARSINE [J]. APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1194 - 1196

[6] BHAT R, 1981, 9TH P INT S GALL ARS, P101

[7] PYROLYSIS OF DISILANE AND RATE CONSTANTS OF SILENE INSERTION REACTIONS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1971, 321 (1546): : 341 - &

[8] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703

[9] CASEY HC, 1978, HETEROSTRUCTURE LA B, P1

[10] TEMPERATURE EFFECTS ON CARBON AND ZINC INCORPORATIONS IN GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) : 442 - 444