TEMPERATURE EFFECTS ON CARBON AND ZINC INCORPORATIONS IN GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：6

作者：

CHEN, LP

CHANG, CY

WU, CH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 01期

关键词：

D O I：

10.1063/1.338973

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：442 / 444

页数：3

共 11 条

[1] CHARACTERIZATION OF FAAS EPITAXIAL LAYERS BY LOW-PRESSURE MOVPE USING TEG AS GA SOURCE [J].

CHANG, CY ;

SU, YK ;

LEE, MK ;

CHEN, LG ;

HOUNG, MP .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :24-29

[2]

KEUCH TF, 1984, J CRYST GROWTH, V68, P148

[3] REDUCED CARBON CONTAMINATION IN OMVPE GROWN GAAS AND ALGAAS [J].

KOBAYASHI, N ;

MAKIMOTO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (10) :L824-L826

[4] REDUCTION OF BACKGROUND DOPING IN METALORGANIC VAPOR-PHASE EPITAXY OF GAAS USING TRIETHYLGALLIUM AT LOW REACTOR PRESSURES [J].

KUECH, TF ;

POTEMSKI, R .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :821-823

[5] MODULATION DOPED GAAS-GA1-XALXAS HETEROSTRUCTURES GROWN BY ATMOSPHERIC-PRESSURE MOVPE [J].

MALUENDA, J ;

FRIJLINK, PM .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (03) :L127-L129

[6] GROWTH OF HIGH-PURITY GAAS EPILAYERS BY MOCVD AND THEIR APPLICATIONS TO MICROWAVE MESFETS [J].

NAKANISI, T ;

UDAGAWA, T ;

TANAKA, A ;

KAMEI, K .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :255-262

[7] A COMPARATIVE-STUDY OF GA(CH3)3 AND GA(C2H5)3 IN THE MOMBE OF GAAS [J].

PUTZ, N ;

HEINECKE, H ;

HEYEN, M ;

BALK, P ;

WEYERS, M ;

LUTH, H .

JOURNAL OF CRYSTAL GROWTH, 1986, 74 (02) :292-300

[8] PROPERTIES OF EPITAXIAL GAAS LAYERS FROM A TRIETHYL GALLIUM AND ARSINE SYSTEM [J].

SEKI, Y ;

TANNO, K ;

IIDA, K ;

ICHIKI, E .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) :1108-1112

[9] EFFECT OF OPERATING PRESSURE ON THE PROPERTIES OF GAAS GROWN BY LOW-PRESSURE MOCVD [J].

TAKAGISHI, S ;

MORI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (12) :L795-L797

[10] EPITAXIAL-GROWTH OF HIGH-PURITY GAAS BY LOW-PRESSURE MOCVD [J].

TAKAGISHI, S ;

MORI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02) :L100-L102

← 1 2 →