EPITAXIAL-GROWTH OF HIGH-PURITY GAAS BY LOW-PRESSURE MOCVD

被引：16

作者：

TAKAGISHI, S

MORI, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 02期

关键词：

D O I：

10.1143/JJAP.23.L100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L100 / L102

页数：3

共 7 条

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[5]

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[6] EFFECT OF OPERATING PRESSURE ON THE PROPERTIES OF GAAS GROWN BY LOW-PRESSURE MOCVD [J].

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[7] METALORGANIC CVD OF GAAS IN A MOLECULAR-BEAM SYSTEM [J].

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