HIGH-POWER SINGLEMODE ALGAAS DISTRIBUTED-BRAGG-REFLECTOR LASER-DIODES OPERATING AT 856NM

被引：20

作者：

MAJOR, JS

OBRIEN, S

GULGAZOV, V

WELCH, DF

LANG, RJ

机构：

[1] Spectra Diode Laboratories, San Jose, CA 95134

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 06期

关键词：

DISTRIBUTED BRAGG REFLECTOR LASERS; LASERS;

D O I：

10.1049/el:19940350

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data are presented describing AlGaAs distributed Bragg reflector (DBR) laser diodes operating at 856 nm with single transverse and longitudinal mode behaviour beyond 270 mW CW. The threshold current of these lasers is 35mA, with a differential quantum efficiency of 58%. Preliminary lifetest data are presented.

引用

页码：496 / 497

页数：2

共 5 条

[1] HIGH-POWER OPERATION OF BURIED-HETEROSTRUCTURE STRAINED-LAYER INGAAS/GAAS SINGLE QUANTUM-WELL LASERS
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[2] SINGLEMODE INGAAS/GAAS DISTRIBUTED-BRAGG-REFLECTOR LASER-DIODES OPERATING AT 1083NM
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[3] SINGLE-MODE INGAAS GAAS-LASER DIODES OPERATING AT 980 NM
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[4] HIGH-POWER SINGLEMODE GAINAS LASERS WITH DISTRIBUTED BRAGG REFLECTORS
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[5] HIGH-POWER 0.98-MU-M INGAAS-GAAS-INGAP DISTRIBUTED-FEEDBACK BURIED HETEROSTRUCTURE STRAINED-QUANTUM-WELL LASERS
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[J]. ELECTRONICS LETTERS, 1993, 29 (10) : 920 - 922

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