SINGLEMODE INGAAS/GAAS DISTRIBUTED-BRAGG-REFLECTOR LASER-DIODES OPERATING AT 1083NM

被引：30

作者：

MAJOR, JS

WELCH, DF

机构：

[1] Spectra Diode Laboratories, San Jose, CA 95134

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 24期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19931418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data are presented describing strained-layer distributed Bragg reflector (DBR) InGaAs/GaAs laser diodes operating at lambda = 1083nm with single transverse and longitudinal mode behaviour beyond 200mW CW. The threshold current of these lasers is approximately 30mA, with a differential quantum efficiency of 65%. The total efficiency is 27% at an output power of 100mW. The thermal and current tuning is approximately 0.8 angstrom/deg and 0.02 - 0.04 angstrom/mA, respectively.

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收藏

页码：2121 / 2122

页数：2

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