HIGH-POWER 0.98-MU-M INGAAS-GAAS-INGAP DISTRIBUTED-FEEDBACK BURIED HETEROSTRUCTURE STRAINED-QUANTUM-WELL LASERS

被引：12

作者：

SIN, YK

HORIKAWA, H

机构：

[1] Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd., 550-5 Higashiasakawa, Hachioji

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 10期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19930614

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data are presented on device results from InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum well lasers entirely grown by a three step MOVPE process showing a laser threshold of 2.9 mA and a maximum monomode output power of 58 mW, both measured CW at RT. The monomode oscillation is obtained even for an injection current of 150 mA (21 times the laser threshold) with a sidemode suppression ratio of 35 dB and the Bragg wavelength at 0.98 mum and this is, to the best of the authors' knowledge, the highest CW monomode output power ever obtained from GaAs-based DFB lasers.

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页码：920 / 922

页数：3

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