HIGH-POWER INGAAS-GAAS-INGAP BURIED HETEROSTRUCTURE STRAINED QUANTUM-WELL LASERS GROWN BY 2-STEP MOVPE

被引：7

作者：

SIN, YK

HORIKAWA, H

KAMIJOH, T

机构：

[1] Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd., Hachioji, Tokyo 193, 550-5, Higashiasakawa

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 02期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19930165

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data are presented on device results from buried heterostructure InGaAs-GaAs strained quantum well lasers with In0.49Ga0.51P cladding layers (lambda(L) = 980 nm). AR-HR coated buried heterostructure lasers with a p-n InGaP current blocking junction show low laser thresholds of 3.1 mA and high output powers of 95 mW both measured CW at RT, and this is the first demonstration of InGaAs-GaAs-InGaP buried heterostructure lasers entirely grown by a two step MOVPE process.

引用

页码：240 / 242

页数：3

共 6 条

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[6]

SIN YK, 1992, 13TH IEEE INT SEM LA, P50

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