EPITAXIAL-GROWTH OF BATIO3 THIN-FILMS AT 600-DEGREES-C BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：50

作者：

KAISER, DL ^{[1
]}

VAUDIN, MD ^{[1
]}

ROTTER, LD ^{[1
]}

WANG, ZL ^{[1
]}

CLINE, JP ^{[1
]}

HWANG, CS ^{[1
]}

MARINENKO, RB ^{[1
]}

GILLEN, JG ^{[1
]}

机构：

[1] NIST,CHEM SCI & TECHNOL LAB,GAITHERSBURG,MD 20899

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 21期

关键词：

D O I：

10.1063/1.113480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

BaTiO3 thin films were grown epitaxially on (100) MgO substrates by metalorganic chemical vapor deposition (MOCVD) at a temperature of 600°C. This substrate temperature is the lowest reported temperature for the growth of epitaxial BaTiO3 films by an MOCVD process. The films had a cube-cube orientation relationship with the substrate and were oriented with an a-axis perpendicular to the substrate plane. Nanoscale energy dispersive x-ray spectrometry measurements showed no evidence of interdiffusion between the film and substrate.© 1995 American Institute of Physics.

引用

页码：2801 / 2803

页数：3

共 26 条

[11] STRUCTURAL AND ELECTRICAL-PROPERTIES OF BATIO3 GROWN ON P-INP (100) BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURE [J].