FLASHLIGHT-SIZE EXTERNAL CAVITY SEMICONDUCTOR LASER WITH NARROW-LINEWIDTH TUNABLE OUTPUT

被引：13

作者：

HECKSCHER, H ^{[1
]}

ROSSI, JA ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED OPTICS | 1975年 / 14卷 / 01期

关键词：

D O I：

10.1364/AO.14.000094

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：94 / 96

页数：3

共 9 条

[1]

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[3]

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[4] TUNABLE GAAS LASER IN AN EXTERNAL DISPERSIVE CAVITY [J].

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HARRIS, EP .

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[6] ROOM-TEMPERATURE LASER OPERATION OF INXGA1-X AS P-N-JUNCTIONS [J].

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ENSTROM, RE ;

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[7] HIGH-RADIANCE ROOM-TEMPERATURE GAAS LASER WITH CONTROLLED RADIATION IN A SINGLE TRANSVERSE MODE [J].

PHILIPPRUTZ, EM .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1972, QE-8 (07) :632-+

[8] DIFFRACTION-LIMITED GAAS LASER WITH EXTERNAL RESONATOR [J].

PHILLIPRUTZ, EM ;

EDMONDS, HD .

APPLIED OPTICS, 1969, 8 (09) :1859-+

[9] HIGH-POWER NARROW-LINEWIDTH OPERATION OF GAAS DIODE LASERS [J].

ROSSI, JA ;

CHINN, SR ;

HECKSCHER, H .

APPLIED PHYSICS LETTERS, 1973, 23 (01) :25-27

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